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| STX13005 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR n n n HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED Figure 1: Package n APPLICATION n n COMPACT FLUORESCENT LAMPS (CFLS) SWITCH MODE POWER SUPPLIES (AC / DC CONVERTERS) TO-92 Figure 2: Internal Schematic Diagram DESCRIPTION The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. Table 1: Order Code Part Number STX13005 STX13005-AP Marking X13005 X13005 Package TO-92 TO-92 AP Packaging Bulk Ammopack Table 2: Absolute Maximum Ratings Symbol VCES VCEO VEBO IC ICM IB IBM Ptot Parameter Collector-Emitter Voltage (VBE = 0) Collector-Emitter Voltage (IB= 0) Emitter-Base Voltage (IC= 0, IB = 1.5 A, tp < 10ms) Collector Current Collector Peak Current (tp < 5ms) Base Current Base Peak Current (tp < 5ms) Total Dissipation at TC = 25 oC Value 700 400 V(BR)EBO 3 6 1.5 3 2.8 Rev. 2 Unit V V V A A A A W February 2005 1/9 STX13005 Symbol Tstg TJ Storage Temperature Max. Operating Junction Temperature Parameter Value -65 to 150 150 Unit C C Table 3: Thermal Data Symbol Rthj-case Rthj-amb Parameter Thermal Resistance Junction-Case Thermal Resistance Junction-ambient Max Max 44.6 150 Unit oC/W oC/W Table 4: Electrical Characteristics (Tcase = 25 oC unless otherwise specified) Symbol ICES ICEO Parameter Collector Cut-off Current (VBE = 0) Collector Cut-off Current (IB = 0 ) V(BR)EBO Emitter-Base Breakdown Voltage (IC = 0 ) VCE(sus)* Collector-Emitter Sustaining Voltage (IB = 0 ) VCE(sat)* Collector-Emitter Saturation Voltage VBE(sat)* hFE* Base-Emitter Saturation Voltage DC Current Gain RESISTIVE LOAD ts tf ts tf Storage Time Fall Time INDUCTIVE LOAD Storage Time Fall Time IC = 1 A IC = 2 A IC = 3 A IC = 1 A IC = 2 A IC = 1 A IC = 2 A IC = 2 A IB1 = - IB2 = 400 mA (see figure 16) IC = 1 A IB1 = 200 mA L = 50 mH (see figure 15) IB = 200 mA IB = 500 mA IB = 750 mA IB = 200 mA IB = 500 mA VCE = 5 V VCE = 5 V VCC = 125 V tp = 30 s VClamp = 300 V VBE(off) = -5 V RBB = 0 0.8 150 s ns 1.65 260 s ns 10 8 0.5 0.6 5 1.2 1.6 30 24 V V V V V IC = 10 mA 400 V IE = 10 mA L = 25 mH 9 18 V Test Conditions VCE = 700 V VCE = 700 V VCE = 400 V Tj = 125 oC Min. Typ. Max. 1 5 1 Unit mA mA mA * Pulsed: Pulsed duration = 300 ms, duty cycle 1.5 %. 2/9 STX13005 Figure 3: Safe Operating Area Figure 6: Derating Curve Figure 4: Output Chatacterisctics Figure 7: DC Current Gain Figure 5: DC Current Gain Figure 8: Collector-Emitter Saturation Voltage 3/9 STX13005 Figure 9: Base-Emitter Saturation Voltage Figure 12: Resistive Load Storage Time Figure 10: Resistive Load Fall Time Figure 13: Inductive Load Storage Time Figure 11: Inductive Load Fall Time Figure 14: Reverse Biased Safe Operating Area 4/9 STX13005 Figure 15: Inductive Load Switching Test Circuit 1) Fast electronic switch 2) Non-inductive Resistor 3) Fast recovery rectifier Table 16: Restistive Load Switching Test Circuit 1) Fast electronic switch 2) Non-inductive Resistor 5/9 STX13005 TO-92 BULK SHIPMENT MECHANICAL DATA DIM. mm. MIN. 4.32 0.36 4.45 3.30 2.41 1.14 12.70 2.16 0.92 0.41 5O TYP MAX. 4.95 0.51 4.95 3.94 2.67 1.40 15.49 2.41 1.52 0.56 A b D E e e1 L R S1 W V 0102782 C 6/9 STX13005 TO-92 AMMOPACK SHIPMENT (Suffix"-AP") MECHANICAL DATA mm. TYP DIM. A1 T T1 T2 d P0 P2 F1,F2 delta H W W0 W1 W2 H H0 H1 D0 t L I1 delta P MIN. 12.50 5.65 2.44 -2.00 17.50 5.70 8.50 18.50 15.50 3.80 12.70 6.35 2.54 18.00 6.00 9.00 16.00 4.00 MAX. 4.80 3.80 1.60 2.30 0.48 12.90 7.05 2.94 2.00 19.00 6.30 9.25 0.50 20.50 16.50 25.00 4.20 0.90 11.00 1.00 3.00 -1.00 7/9 STX13005 Table 5: Revision History Date 01-Jul-2004 11-Feb-2005 Release 1 2 First Release. New table on page 1. Change Designator 8/9 STX13005 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners (c) 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 9/9 |
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